"Nanoserf" and “Solar-MN” installations are used for the synthesis of thin films of various compounds (Al2O3, TiO2, ZnO, HfO2, VO2, SnO2 et al.) designed thickness (from angstrom to micrometers) on the surface of flat, «3D» substrates and dispersed materials by Atomic Layer Deposition (ALD).
Application fields: microelectronics, micromechanics, solar cells, optics, optoelectronics, fuel cells, supercapacitors, sensors, etc.
1. Dimensions of the reaction chamber:
"Nanoserf" - 40 x 100 x 150 mm
"Solar- MN" - 20 x 210 x 250 mm
2 . Number of precursor lines:
"Nanoserf” - 3 precursor vapor lines, 1 line for injecting liquid precursor.
" Solar- MN" - 5 precursor vapor lines, 1 line for injecting liquid precursor.
(nonvolatile solid reactants can be fed to the reactor by injection of a solution in a volatile solvent)
3. Temperature of the reaction chamber - up to 300oC
4 . Film growth rate – up to 100 nm per hour
5 . Uniformity of film thickness over the area of the substrate (diameter 100 mm): thickness deviation < 2-5 % (depending on the film type, thickness and the precursors used)
6. The synthesis is conducted in carrier gas flow (nitrogen, argon) at a pressure of 0.1-50 Torr